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GenX3 TM 600V IGBT
with Diode
High-Speed Low-Vsat PT
IGBTs 40-100 kHz Switching
IXGN72N60C3H1
V CES
I C110
V CE(sat)
t fi(typ)
=
=
≤ ￡
=
600V
52A
2.50V
55ns
SOT-227B, miniBLOC
E153432
Symbol
V CES
V CGR
V GES
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GE = 1M Ω
Continuous
Maximum Ratings
600
600
± 20
V
V
V
G
E
V GEM
I C25
I C110
I CM
I A
E AS
SSOA
(RBSOA)
P C
T J
T JM
T stg
V ISOL
M d
Weight
Transient
T C = 25 ° C
T C = 110 ° C
T C = 25 ° C, 1ms
T C = 25 ° C
T C = 25 ° C
V GE = 15V, T VJ = 125 ° C, R G = 2 Ω
Clamped Inductive Load
T C = 25 ° C
50/60Hz t = 1min
I ISOL ≤ 1mA t = 1s
Mounting Torque
Terminal Connection Torque
± 30
78
52
360
50
500
I CM = 150
@ V CE ≤ V CES
360
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
V
A
A
A
A
mJ
A
W
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Switching Losses
Square RBSOA
Aluminium Nitride Isolation
- High Power Dissipation
Isolation Voltage 3000V~
Avalanche Rated
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
V GE(th) I C = 250 μ A, V CE = V GE
Characteristic Values
Min. Typ. Max.
3.0 5.5
V
Power Inverters
UPS
Motor Drives
I CES
I GES
V CE(sat)
V CE = V CES , V GE = 0V
T J = 125 ° C
V CE = 0V, V GE = ± 20V
I C = 50A, V GE = 15V, Note 1
T J = 125 ° C
2.10
1.65
250
3
± 100
2.50
μ A
mA
nA
V
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
? 2009 IXYS CORPORATION, All Rights Reserved
DS100053A(11/09)
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